The effect of inelastic phonon scattering on carbon nanotube-based transistor performance
نویسندگان
چکیده
منابع مشابه
The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance
Carbon nanotube (CNT) based transistors have been studied in recent years as potential alternatives to CMOS devices because of their capability of near ballistic transport. In this work the non-equilibrium Green’s function (NEGF) formalism is used to perform a comprehensive study of CNT based transistors. The effect of inelastic phonon scattering on the gate-delay time of CNT based transistors ...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2008
ISSN: 1742-6596
DOI: 10.1088/1742-6596/109/1/012029